Payment Method
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
IPD30N06S4L-23 TO-252-3 MOSFETs ROHS Product Description
TO-252-3Manufacturer:
Mfr.Part #:
IPD30N06S4L-23
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
4
Reach Compliance Code:
not_compliant
EDA/CAD Models:
Send all BOMs to
[email protected],
or fill out the form below for a quote on IPD30N06S4L-23. Guaranteed response within
12hr.
Please fill in the short form below and we will provide you the quotation immediately.
The IPD30N06S4L-23 power MOSFET transistor is a reliable and efficient component for high current, high power applications. With a voltage rating of 60V and a continuous current rating of 30A, this transistor is well-equipped to handle demanding tasks. Its low on-resistance of 0.023 ohms ensures minimal power loss and greater efficiency, making it a standout choice for projects requiring high power output. Additionally, its fast switching speed enables quick responses in high-speed circuits, enhancing overall performance
Source Content uid | IPD30N06S4L-23 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 4 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 18 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 30 A | Drain-source On Resistance-Max | 0.023 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 36 W |
Pulsed Drain Current-Max (IDM) | 120 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 30 A | Rds On - Drain-Source Resistance | 18 mOhms |
Vgs - Gate-Source Voltage | - 16 V, + 16 V | Vgs th - Gate-Source Threshold Voltage | 1.2 V |
Qg - Gate Charge | 21 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 36 W |
Channel Mode | Enhancement | Tradename | OptiMOS |
Series | OptiMOS-T2 | Fall Time | 3 ns |
Height | 2.3 mm | Length | 6.5 mm |
Product Type | MOSFET | Rise Time | 1 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 4 ns | Width | 6.22 mm |
Part # Aliases | SP000374320 IPD3N6S4L23XT IPD30N06S4L23ATMA1 | Unit Weight | 0.011640 oz |
After-Sales & Settlement Related
Payment Method
For alternative payment channels, please reach out to us at:
[email protected]Shipping Method
AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
365-Day Product
Quality Guarantee
We promise to provide 365 days quality assurance service for all our products.
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $0.830 | $0.83 |
10+ | $0.645 | $6.45 |
30+ | $0.543 | $16.29 |
100+ | $0.429 | $42.90 |
500+ | $0.376 | $188.00 |
1000+ | $0.353 | $353.00 |
The prices below are for reference only.