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IPD320N20N3G +BOM

IPD320N20N3 G: 200V N-channel MOSFET with 34A current rating in DPAK package

Manufacturer:

Infineon
Mfr.Part #:

IPD320N20N3G
Datasheet:

IPD320N20N3G Datasheet (PDF)
IDpuls Max:

136.0 A
Ptot Max:

136.0 W
VDS Max:

200.0 V
Polarity:

N

IPD320N20N3G General Description

Infineon Technologies presents the IPD320N20N3 G power MOSFET, a stellar choice for high-power applications necessitating advanced performance. Operating at a voltage of 200V and with a rating of 320A, this N-channel semiconductor excels in scenarios where minimizing conduction and switching losses is vital. At just 0.003 ohms of on-resistance, efficient power transfer and reduced power dissipation are guaranteed, making it an ideal fit for demanding areas such as motor drives, welding machinery, and robust power systems. Noteworthy is its high avalanche energy rating of 3800mJ, a testament to its reliability and ruggedness in harsh operating conditions. Encased in a TO-274 package, the MOSFET's expansive surface area ensures efficient heat dissipation, enabling continuous high-current operations with no risk of overheating

Key Features

Advanced power management
Ruggedized design for harsh environments
Fast and reliable switching performance
Compact size with high energy density
Economical and efficient operation
Robust and fault-tolerant architecture

Application

Energy-efficient power supplies
Advanced motor circuits
Automated industrial solutions

Specifications

IDpuls max	136.0 A	Ptot max	136.0 W
VDS max	200.0 V	Polarity	N
RDS (on) max	32.0 mΩ	ID max	34.0 A
VGS(th) max	4.0 V	VGS(th) min	2.0 V
Operating Temperature max	175.0 °C	Operating Temperature min	-55.0 °C