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IPD50P04P4L-11 +BOM

MOSFETs IPD50P04P4L-11 TO-252-3L ROHS

IPD50P04P4L-11 General Description

Power up your projects with the IPD50P04P4L-11 Power Field-Effect Transistor. This P-Channel MOSFET offers a voltage rating of 40V and a single-element design for simplified circuit integration. With a low on-resistance of 0.0106ohm, this Silicon FET ensures minimal power loss and maximum efficiency. Housed in a TO-252 package with a green plastic exterior, this transistor combines performance and environmental consciousness for a versatile power solution

Key Features

LOGIC LEVEL COMPATIBLE

Application

SWITCHING

Specifications

RthJC max 2.6 K/W Ptot max 58.0 W
IDpuls max -200.0 A Qualification Automotive
VDS max -40.0 V ID max -50.0 A
VGS(th) min -1.2 V Polarity P
RDS (on) max 10.6 mΩ VGS(th) max -2.2 V
QG max 45.0 nC Technology OptiMOS™-P2
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C

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