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IPG20N06S2L50ATMA1 +BOM

Mosfet Array 55V 20A 51W Surface Mount PG-TDSON-8-4

IPG20N06S2L50ATMA1 General Description

Mosfet Array 55V 20A 51W Surface Mount PG-TDSON-8-4

Infineon Technologies Corporation Inventory

Key Features

  • Dual N-channel Logic Level - Enhancement mode
  • AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green Product (RoHS compliant)
  • 100% Avalanche tested
  • Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.
  • Bond wire is 200um for up to 20A current
  • Larger source lead frame connection for wire bonding
  • Package: PG-TDSON-8-4
  • Same thermal and electrical performance as a DPAK with the same die size.
  • Exposed pad provides excellent thermal transfer (varies by die size)
  • Two N-Channel MOSFETs in one package with 2 isolated leadframes
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays Series OptiMOS™
Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 20A Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 19µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V Power - Max 51W
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number IPG20N RHoS yes
PBFree yes HalogenFree yes
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Qualification AEC-Q101 Tradename OptiMOS
Height 1.27 mm Length 5.9 mm
Product Type MOSFET Subcategory MOSFETs
Transistor Type 1 N-Channel Width 5.15 mm
Part # Aliases IPG20N06S2L-50 SP000613728

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IPG20N06S2L50ATMA1 Datasheet PDF

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