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IPD50R500CE +BOM

MOSFET Transistor IPD50R500CE N-Channel

IPD50R500CE General Description

N-Channel 500 V 7.6A (Tc) 57W (Tc) Surface Mount PG-TO252-3-11

Key Features

  • Reduced energy stored in output capacitance (Eoss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Qrr)
  • Reduced gate charge (Qg)
  • Overall Features
  • BENEFITS
  • Reduction of switching losses, improvement of light load efficiency
  • Higher reliability under critical operating conditions
  • Lower possibility of hard commutation in resonant topologies
  • Improvement in light load efficiency
  • Lower gate drive capability required
  • Easy control of switching behavior
  • Outstanding reliability with proven CoolMOSTM quality

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V
Vgs(th) (Max) @ Id 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs 18.7 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 433 pF @ 100 V
FET Feature - Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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