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See Technical Specifications

IPD70N10S3L-12 +BOM

MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T

Manufacturer:

INFINEON
Mfr.Part #:

IPD70N10S3L-12
Datasheet:

IPD70N10S3L-12 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for IPD70N10S3L-12

IPD70N10S3L-12 General Description

Invest in the IPD70N10S3L-12 Power Field-Effect Transistor for your next project and experience the benefits of superior performance, reliability, and efficiency. Its advanced design and construction make it an excellent choice for professionals and hobbyists alike who require a dependable and high-quality semiconductor device. Upgrade your electronic designs today with the IPD70N10S3L-12 and unleash the full potential of your applications

Key Features

Static drain-source on-resistance:
RDS(on)≤0.6Ω
Enhancement mode:
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation

Specifications

Source Content uid	IPD70N10S3L-12	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	410 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	70 A
Drain-source On Resistance-Max	0.0152 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	125 W	Pulsed Drain Current-Max (IDM)	280 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Element Material	SILICON