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IPD80R1K4P7 +BOM

DPAK Packaged N-Channel Power MOSFET

IPD80R1K4P7 General Description

By incorporating the latest technology, the IPD80R1K4P7 MOSFET series enables designers to achieve higher power density designs with lower switching losses and enhanced DPAK R DS(on) products. This translates to cost savings in terms of BOM and reduced assembly efforts for customers, making it an attractive option for those seeking both performance and efficiency in their SMPS applications

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 500 V
FET Feature - Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount

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In Stock: 5,571

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $0.933 $0.93
10+ $0.783 $7.83
30+ $0.700 $21.00
100+ $0.609 $60.90
500+ $0.567 $283.50
1000+ $0.548 $548.00

The prices below are for reference only.

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