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IPD90P03P4L-04 +BOM

P Channel MOSFET TO-252-3 30V 90A 137W

IPD90P03P4L-04 General Description

With its green plastic packaging and single-element design, the IPD90P03P4L-04 offers a compact and reliable solution for power electronics designs. The silicon construction ensures efficient performance and durability, while the Metal-oxide semiconductor technology enhances the device's switching capabilities

Key Features

  • The transistor has a drain-source voltage rating of 30V
  • It features a continuous drain current of 90A
  • This makes it suitable for high-power applications

Application

  • Industrial electronics use
  • High efficiency design

Specifications

RthJC max 1.1 K/W IDpuls max -360.0 A
Ptot max 137.0 W Qualification Automotive
VDS max -30.0 V VGS(th) min -1.0 V
Polarity P RDS (on) max 4.5 mΩ
VGS(th) max -2.0 V QG max 125.0 nC
ID max -90.0 A Technology OptiMOS™-P2
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C

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