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IPP023NE7N3G +BOM

IPP023NE7N3 G N Channel Power MOSFET 75V 100A

IPP023NE7N3G General Description

Power Field-Effect Transistor, 120A I(D), 75V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Key Features

  • Optimized technology for synchronous rectification
  • Ideal for high frequency switching and DC/DC converters
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • N-channel; Normal level
  • 100% Avalanche tested
  • Pb-free plating; RoHS compliant
  • Qualified according to JEDEC1) for target applications

Specifications

Source Content uid IPP023NE7N3G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 1100 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0023 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W Pulsed Drain Current-Max (IDM) 480 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Series OptiMOS™ 3
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14400 pF @ 37.5 V
Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IPP023N

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