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IPP60R180C7 +BOM

New high-power MOSFET model: IPP60R180C7

IPP60R180C7 General Description

The 600V CoolMOS C7 series is not just a simple upgrade – it's a paradigm shift in power management technology. By delivering unmatched performance and efficiency improvements in critical applications like PFC and TTF, this MOSFET series is setting new standards for energy efficiency and cost-effectiveness. With gains of up to 0.7% in PFC alone, the CoolMOS C7 is a must-have component for any design aiming for superior efficiency and performance

Key Features

  • Suitable for hard and soft switching(PFC and high performance LLC)
  • Increased MOSFET dv/dt ruggedness to 120V/ns
  • Increased efficiency due to best in class FOM RDS(on) Eoss and RDS(on)Qg
  • Best in class RDS(on)/package
  • Qualified for industrial grade applications according to JEDEC(J-STD20
  • and JESD22)

Specifications

Source Content uid IPP60R180C7 Part Life Cycle Code Active
Reach Compliance Code compliant ECCN Code EAR99
Avalanche Energy Rating (Eas) 53 mJ Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 13 A Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 45 A Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON IDpuls max 45.0 A
Mounting THT Ptot max 68.0 W
Polarity N RthJA max 62.0 K/W
RthJC max 1.832 K/W VDS max 600.0 V
ID max 13.0 A RDS (on) max 180.0 mΩ
Special Features highest performance VGS(th) max 4.0 V
VGS(th) min 3.0 V Operating Temperature max 150.0 °C
Operating Temperature min -55.0 °C

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