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IPP60R360P7 +BOM

Silicon Metal-oxide Semiconductor FET

IPP60R360P7 General Description

Say goodbye to inefficiency and hello to the future of power electronics with the IPP60R360P7 600V CoolMOS™ P7 transistor. This next-generation device is designed to deliver maximum efficiency and ease of use, making it the perfect solution for your power management needs. With its unmatched performance and advanced features, the CoolMOS™ P7 sets a new benchmark for power transistors, ensuring that your projects run smoothly and efficiently

Specifications

Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Avalanche Energy Rating (Eas) 27 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 26 A Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON Product Category MOSFET
Product Type MOSFET Subcategory MOSFETs

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