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See Technical Specifications

IPT004N03L +BOM

Trans MOSFET N-CH 30V 72A T/R

Manufacturer:

INFINEON
Mfr.Part #:

IPT004N03L
Datasheet:

IPT004N03L Datasheet (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Models:

Request Free CAD Models for IPT004N03L

IPT004N03L General Description

MOSFET MV POWER MOS

Key Features

100% avalanche tested
Superior thermal resistance
N-channel
Qualified according to JEDEC 1) for target applications
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21

Application

SWITCHING

Specifications

Source Content uid	IPT004N03L	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	830 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	300 A	Drain-source On Resistance-Max	0.0005 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PSSO-F2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	300 W	Pulsed Drain Current-Max (IDM)	1200 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	300 A	Rds On - Drain-Source Resistance	400 uOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	700 mV
Qg - Gate Charge	122 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 W
Channel Mode	Enhancement	Tradename	OptiMOS
Fall Time	37 ns	Forward Transconductance - Min	160 S
Height	2.4 mm	Length	10.58 mm
Product Type	MOSFET	Rise Time	17 ns
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	149 ns
Typical Turn-On Delay Time	30 ns	Width	10.1 mm
Part # Aliases	SP001100156 IPT004N03LATMA1	Unit Weight	0.002293 oz

Service Policies and Others

After-Sales & Settlement Related

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty

365-Day Product

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We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

L**s 05/16/2024

delivered. five star.

L**m 08/05/2022

According to the description. The fifth star is for the speed in the processing of the order.

Z**a 10/01/2020

I bought it right away and the body, i sit collecting. I did not check, probably it will work. In such a case, he simply has to work even without power. I will put it in the most prominent place and will show guests. And i'll keep it for my grandchildren.

W**m 07/17/2020

Everything is fine. i recommend