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IPT004N03LATMA1 +BOM

MOSFET transistor optimized for automotive environments

Manufacturer:

INFINEON
Mfr.Part #:

IPT004N03LATMA1
Datasheet:

IPT004N03LATMA1 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

30 V
Current - Continuous Drain (Id) @ 25°C:

300A (Tc)
EDA/CAD Models:

Request Free CAD Models for IPT004N03LATMA1

IPT004N03LATMA1 General Description

The IPT004N03LATMA1 MOSFET transistor is a high-performance component designed for use in a variety of applications. With a maximum drain source voltage of 30V and a continuous drain current of 300A, this N-Channel transistor offers reliable and efficient operation. The low on resistance of 370µohm ensures minimal power loss, while the threshold voltage of 2.2V and power dissipation of 300W make it suitable for demanding tasks. The PG-HSOF-8 case style provides easy integration into existing circuit designs, with 8 pins for secure connections. Operating at a maximum temperature of 150°C, this transistor is part of the OptiMOS series, known for its high quality and performance

Key Features

Low voltage operation: Maximum drain-source voltage of 30V

Maximum drain current of 4A

Small SOT-223 package

Low on-resistance

Low gate charge

Low input capacitance

High frequency operation

High power dissipation

High temperature operation

Application

Power management

Motor control

Switching applications

Automotive applications

Industrial applications

Consumer electronics

Lighting applications

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	0.4mOhm @ 150A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	163 nC @ 4.5 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	24000 pF @ 15 V
FET Feature	-	Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	300 A
Rds On - Drain-Source Resistance	400 uOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	700 mV	Qg - Gate Charge	122 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	300 W	Channel Mode	Enhancement
Tradename	OptiMOS	Configuration	Single
Fall Time	37 ns	Forward Transconductance - Min	160 S
Height	2.4 mm	Length	10.58 mm
Product Type	MOSFET	Rise Time	17 ns
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	149 ns
Typical Turn-On Delay Time	30 ns	Width	10.1 mm
Part # Aliases	IPT004N03L SP001100156	Unit Weight	0.027232 oz