This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

IPT020N10N3ATMA1 +BOM

With a gate-source threshold voltage of 3.5V at 272uA, this MOSFET is suitable for high power applications

Manufacturer:

Infineon
Mfr.Part #:

IPT020N10N3ATMA1
Datasheet:

IPT020N10N3ATMA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IPT020N10N3ATMA1

IPT020N10N3ATMA1 General Description

The IPT020N10N3ATMA1 is a powerful n-channel transistor designed for high-performance applications. With a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 300A, this transistor can handle heavy loads with ease. Its on resistance (Rds(On)) is impressively low at 0.0017Ohm, ensuring minimal power loss during operation

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	300 A	Rds On - Drain-Source Resistance	2 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	156 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	375 W
Channel Mode	Enhancement	Tradename	OptiMOS
Series	OptiMOS 3	Configuration	Single
Fall Time	18 ns	Forward Transconductance - Min	125 S
Height	2.4 mm	Length	10.58 mm
Product Type	MOSFET	Rise Time	58 ns
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	84 ns
Typical Turn-On Delay Time	34 ns	Width	10.1 mm
Part # Aliases	IPT020N10N3 SP001100160	Unit Weight	0.027197 oz
FET Type	N-Channel	Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	300A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2mOhm @ 150A, 10V	Vgs(th) (Max) @ Id	3.5V @ 272µA
Gate Charge (Qg) (Max) @ Vgs	156 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	11200 pF @ 50 V	Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPT020