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See Technical Specifications

IPT059N15N3ATMA1 +BOM

150 Volt N-Channel Transistor with 155 Amps Current Rating in Eight-Pin Heatsink Small Outline Flat Package

Manufacturer:

Infineon
Mfr.Part #:

IPT059N15N3ATMA1
Datasheet:

IPT059N15N3ATMA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IPT059N15N3ATMA1

IPT059N15N3ATMA1 General Description

Transform your high current applications with the IPT059N15N3ATMA1, a state-of-the-art product engineered for optimal performance. Ideal for industries such as forklifts, light electric vehicles, point-of-load systems, and telecom infrastructure, this product features a cutting-edge TO-Leadless package that provides unmatched efficiency, EMI behavior, and thermal management capabilities. With the industry's lowest R DS(on) and a maximum current capability of 300A, this package exceeds expectations for high-power applications. By utilizing this innovative product, you can reduce the need for paralleling and cooling, enhance system reliability, lower costs, and create compact designs for your forklifts, electric vehicles, point-of-load systems, and telecom applications. Experience the benefits of the IPT059N15N3ATMA1 and revolutionize the performance of your high power applications today

Key Features

Compact and lightweight design
Low noise operation
High reliability performance
Suitable for consumer electronics

Application

Sustainable energy solutions
High-performance inverters
Reliable power supplies

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	150 V
Id - Continuous Drain Current	155 A	Rds On - Drain-Source Resistance	5.9 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	69 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	375 W
Channel Mode	Enhancement	Tradename	OptiMOS
Series	OptiMOS 3	Configuration	Single
Fall Time	14 ns	Forward Transconductance - Min	86 S
Height	2.4 mm	Length	10.58 mm
Product Type	MOSFET	Rise Time	35 ns
Factory Pack Quantity	2000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	46 ns
Typical Turn-On Delay Time	25 ns	Width	10.1 mm
Part # Aliases	IPT059N15N3 SP001100162	Unit Weight	0.027197 oz
FET Type	N-Channel	Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	155A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	5.9mOhm @ 150A, 10V	Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7200 pF @ 75 V	Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPT059