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IPT65R033G7XTMA1 +BOM

Cutting-edge MOSFET for High Power Requirements

IPT65R033G7XTMA1 General Description

N-Channel 650 V 69A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2

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Key Features

  • CoolMOS™ S7 technology enables 22mΩ RDS(on) in the smallest footprint
  • Optimized price performance in low frequency switching applications
  • High pulse current capability
  • Kelvin Source pin improves switching performanceat high current
  • TOLL package is MSL1 compliant, total Pb-free,has easy visual inspection leads
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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 69 A Rds On - Drain-Source Resistance 33 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 110 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 391 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS C7 Gold Configuration Single
Fall Time 5 ns Height 2.4 mm
Length 10.58 mm Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 85 ns Typical Turn-On Delay Time 20 ns
Width 10.1 mm Part # Aliases IPT65R033G7 SP001456202
Unit Weight 0.027197 oz

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