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IPW60R060C7XKSA1 +BOM

High-power MOSFET for new applications"

Manufacturer:

Infineon
Mfr.Part #:

IPW60R060C7XKSA1
Datasheet:

IPW60R060C7XKSA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IPW60R060C7XKSA1

IPW60R060C7XKSA1 General Description

Infineon Technologies' IPW60R060C7XKSA1 is part of the renowned 600V CoolMOS C7 series, known for its exceptional switching frequency capability, minimal switching losses, and impressive thermal performance. With a high avalanche energy rating of 240mJ, this transistor can easily handle high surge currents, making it a reliable choice for applications requiring robust performance. Its continuous drain current rating of 42 amps and maximum power dissipation of 150 watts further highlight its capability to handle heavy-duty tasks with ease

Application

SWITCHING

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	35 A	Rds On - Drain-Source Resistance	52 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	68 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	162 W
Channel Mode	Enhancement	Tradename	CoolMOS
Series	CoolMOS C7	Configuration	Single
Fall Time	4 ns	Height	21.1 mm
Length	16.13 mm	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	240
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	79 ns	Typical Turn-On Delay Time	15.5 ns
Width	5.21 mm	Part # Aliases	IPW60R060C7 SP001385020
Unit Weight	0.211644 oz