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IPW60R060P7XKSA1 +BOM

N-Channel 600 V 48A (Tc) 164W (Tc) Through Hole PG-TO247-3

Manufacturer:

Infineon
Mfr.Part #:

IPW60R060P7XKSA1
Datasheet:

IPW60R060P7XKSA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for IPW60R060P7XKSA1

IPW60R060P7XKSA1 General Description

When it comes to power MOSFETs, the IPW60R060P7XKSA1 stands out for its exceptional performance and reliability. With a focus on efficiency and low power consumption, this MOSFET is ideal for applications where every watt counts. Its high voltage rating and current capacity make it a versatile choice for various electronic projects, while its low on-state resistance ensures minimal power loss and maximum efficiency

Key Features

Surface mount package
Low noise and ripples
Ergonomic design for comfort

Application

High performance motors
Advanced energy solutions
Smart grid applications

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	48 A	Rds On - Drain-Source Resistance	49 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	67 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	164 W
Channel Mode	Enhancement	Tradename	CoolMOS
Series	CoolMOS P7	Configuration	Single
Fall Time	23 ns	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	240
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	79 ns	Typical Turn-On Delay Time	23 ns
Part # Aliases	IPW60R060P7 SP001647042	Unit Weight	0.211644 oz