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IPW60R099CPAFKSA1 +BOM

N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3

IPW60R099CPAFKSA1 General Description

N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3

Infineon Technologies Corporation Inventory

Key Features

  • Lowest figure-of-merit R
  • ON
  • g
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Automotive AEC Q101 qualified
  • Green package (RoHS compliant)
Infineon Technologies Corporation Original Stock

Specifications

RHoS yes PBFree yes
Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 31 A Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 80 nC Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 255 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename CoolMOS Series CoolMOS CPA
Configuration Single Fall Time 5 ns
Height 21.1 mm Length 16.13 mm
Product Type MOSFET Rise Time 5 ns
Factory Pack Quantity 240 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 60 ns
Typical Turn-On Delay Time 10 ns Width 5.21 mm
Part # Aliases IPW60R099CPA SP000597860 Unit Weight 0.211644 oz

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IPW60R099CPAFKSA1 Datasheet PDF

Preliminary Specification IPW60R099CPAFKSA1 PDF Download

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