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IPW65R019C7FKSA1 +BOM

Power Field-Effect Transistor, 75A, 650V, 0.019ohm

IPW65R019C7FKSA1 General Description

The IPW65R019C7FKSA1 MOSFET is a high-performance N-channel transistor designed for applications requiring a maximum drain source voltage of 650V and a continuous drain current of 75A. With an on-resistance of 0.017ohm and a threshold voltage of 3.5V, this MOSFET offers excellent efficiency and reliability in power switching applications

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Key Features

  • Increased MOSFET dv/dt ruggedness
  • Better efficiency due to best in class FOM RDS(on)Eoss and RDS(on)Qg
  • Best in class RDS(on) /package
  • Easy to use/drive
  • Pb-free plating, halogen free mold compound
  • Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
  • Benefits
  • Enabling higher system efficiency
  • Enabling higher frequency / increased power density solutions
  • System cost / size savings due to reduced cooling requirements
  • Higher system reliability due to lower operating temperatures
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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 75 A Rds On - Drain-Source Resistance 19 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 215 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 446 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS C7 Configuration Single
Fall Time 5 ns Height 21.1 mm
Length 16.13 mm Product Type MOSFET
Rise Time 27 ns Factory Pack Quantity 240
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 106 ns Typical Turn-On Delay Time 30 ns
Width 5.21 mm Part # Aliases IPW65R019C7 SP000928646
Unit Weight 0.211644 oz

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