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IPW65R050CFD7A +BOM

Optimize energy efficiency with high-performance power management

IPW65R050CFD7A General Description

The IPW65R050CFD7A stands out as the pinnacle of innovation in the realm of superjunction MOSFETs. Boasting a super-low on-state resistance of 50mΩ and an ultra-low gate charge of 39nC, this MOSFET is tailor-made for high-efficiency power supply applications requiring maximum power density. Its exceptional performance is underlined by a high switching frequency capability and minimal conduction losses, ensuring peak operation in switching applications. Additionally, the MOSFET's low reverse recovery charge and output capacitance enable rapid switching speeds and reduced power dissipation

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Specifications

ID max 45.0 A IDpuls max 211.0 A
Mounting THT Operating Temperature max 150.0 °C
Operating Temperature min -40.0 °C Ptot max 227.0 W
Polarity N Qualification Automotive
RDS (on) max 50.0 mΩ Technology CoolMOS™ CFD7A
VDS max 650.0 V VGS(th) max 4.5 V
VGS(th) min 3.5 V QG max 102.0 nC

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