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IPW65R420CFD +BOM

MOSFET N-Ch 650V 8.7A TO247-3 CoolMOS CFD2

IPW65R420CFD General Description

N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO247-3-1

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Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 8.7 A Rds On - Drain-Source Resistance 420 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 32 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 83.3 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS CFD2 Configuration Single
Fall Time 8 ns Height 21.1 mm
Length 16.13 mm Product Type MOSFET
Rise Time 7 ns Factory Pack Quantity 240
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 5.21 mm Part # Aliases IPW65R420CFDFKSA1 SP000890686 IPW65R420CFDFKSA1
Unit Weight 0.211644 oz

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