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IPW90R800C3 +BOM

Tube Packaged N-Channel 900V MOSFET

IPW90R800C3 General Description

N-Channel 900 V 6.9A (Tc) 104W (Tc) Through Hole PG-TO247-3-1

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Key Features

  • Lowest figure-of-merit RON x Qg
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant
  • Ultra low gate charge
Infineon Original Stock

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 900 V
Id - Continuous Drain Current 6.9 A Rds On - Drain-Source Resistance 620 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 42 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 104 W
Channel Mode Enhancement Tradename CoolMOS
Series CoolMOS C3 Configuration Single
Fall Time 32 ns Height 21.1 mm
Length 16.13 mm Product Type MOSFET
Rise Time 20 ns Factory Pack Quantity 240
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 400 ns Typical Turn-On Delay Time 70 ns
Width 5.21 mm Part # Aliases SP000413758 IPW9R8C3XK IPW90R800C3FKSA1
Unit Weight 0.211644 oz

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In Stock: 8,530

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $3.221 $3.22
10+ $2.812 $28.12
30+ $2.569 $77.07
100+ $2.323 $232.30
500+ $2.209 $1,104.50
1000+ $2.158 $2,158.00

The prices below are for reference only.

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