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ISC027N10NM6ATMA1: Trench MOSFET for High Voltage Applications
PG-TDSON-8 FLManufacturer:
Mfr.Part #:
ISC027N10NM6ATMA1
Datasheet:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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N-Channel 100 V 23A (Ta), 192A (Tc) 3W (Ta), 217W (Tc) Surface Mount PG-TDSON-8 FL
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 192 A | Rds On - Drain-Source Resistance | 2.7 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3.3 V |
Qg - Gate Charge | 58 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 217 W |
Channel Mode | Enhancement | Series | ISC027N10 |
Product | MOSFET | Product Type | MOSFET |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Part # Aliases | ISC027N10NM6 SP005339566 |
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