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ISC027N10NM6ATMA1 +BOM

ISC027N10NM6ATMA1: Trench MOSFET for High Voltage Applications

ISC027N10NM6ATMA1 General Description

N-Channel 100 V 23A (Ta), 192A (Tc) 3W (Ta), 217W (Tc) Surface Mount PG-TDSON-8 FL

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 192 A Rds On - Drain-Source Resistance 2.7 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.3 V
Qg - Gate Charge 58 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 217 W
Channel Mode Enhancement Series ISC027N10
Product MOSFET Product Type MOSFET
Factory Pack Quantity 5000 Subcategory MOSFETs
Part # Aliases ISC027N10NM6 SP005339566

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