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ISS17EP06LMXTSA1 +BOM

MOSFETs designed for low-power applications

ISS17EP06LMXTSA1 General Description

P-Channel 60 V 300mA (Ta) 360mW (Ta) Surface Mount PG-SOT23

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Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 300 mA Rds On - Drain-Source Resistance 1.7 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 1.79 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Enhancement Series ISS06P010
Configuration Single Fall Time 9 ns
Forward Transconductance - Min 0.64 S Product Type MOSFET
Rise Time 3 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 27 ns Typical Turn-On Delay Time 2 ns
Part # Aliases ISS17EP06LM SP004987276 Unit Weight 0.000282 oz

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