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ISL73096EHVX +BOM

Bipolar Transistors - BJT

Manufacturer:

Renesas Electronics
Mfr.Part #:

ISL73096EHVX
Datasheet:

ISL73096EHVX Datasheet (PDF)
Series:

ISL73096
Height:

mm
Length:

mm
Technology:

Si

ISL73096EHVX General Description

When it comes to high-performance transistor arrays for radiation-sensitive applications, the ISL73096EHVX, ISL73127EHVX, and ISL73128EHVX are second to none. Their advanced construction, rigorous testing, and cutting-edge design make them the perfect choice for aerospace, defense, and other industries where reliability and performance are non-negotiable. Whether you need a transistor array for a high-frequency amplifier, mixer, or other demanding application, these devices deliver the precision and efficiency you need to succeed. Trust in the ISL73096EHVX, ISL73127EHVX, and ISL73128EHVX to power your next project to new heights

Key Features

Electrically screened to SMD # 5962-07218
QML qualified per MIL-PRF-38535 requirements
Radiation tolerance
High dose rate (50-300rad(Si)/s): 100krad(Si)
Low dose rate (0.01rad(Si)/s): 50krad(Si)*
SEL immune: Bonded wafer dielectric isolation
NPN gain bandwidth product (F_T: 8GHz (typ)
NPN current gain (h_FE): 130 (typ)
NPN early voltage (V_A): 50V (typ)
PNP gain bandwidth product (F_T): 5.5GHz (typ)
PNP current gain (h_FE): 60 (typ)
PNP early voltage (V_A): 20V (typ)
Noise figure (50Ω) at 1GHz: 3.5dB (typ)
Collector-to-collector leakage: <1pA (typ)
Complete isolation between transistors * Limit established by characterization

Specifications

Product Category	Bipolar Transistors - BJT	Series	ISL73096
Height	mm	Length	mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	mm