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ISC058N04NM5ATMA1 +BOM

MOSFET TRENCH <= 40V

ISC058N04NM5ATMA1 General Description

N-Channel 40 V 17A (Ta), 63A (Tc) 3W (Ta), 42W (Tc) Surface Mount PG-TDSON-8 FL

Infineon Technologies Corporation Inventory

Key Features

  • Normal level gate threshold (2.8V typical)
  • 175°C junction temperature (T
  • j
  • Optimized charge ratio (Q
  • GD
  • GS
  • Low gate charge
  • Superior thermal resistance
  • Strong SOA (safe operating area) rating
  • Reduced switching losses leading to greater system efficiency and power density
  • Suitable for operation at higher frequencies enabling advanced motor control techniques like field oriented control (FOC), direct torque control (DTC) as well as block commutation method
  • Capable of withstanding high surge current during in-rush, locked rotor and braking scenarios
Infineon Technologies Corporation Original Stock

Application

  • Battery powered applications
  • Battery powered tools
  • Battery management
  • Low-voltage drives

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Series OptiMOS™-5
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 5.8mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 3.4V @ 13µA Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 20 V
FET Feature - Power Dissipation (Max) 3W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Base Product Number ISC058N RHoS yes
PBFree yes HalogenFree yes

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ISC058N04NM5ATMA1 Datasheet PDF

Preliminary Specification ISC058N04NM5ATMA1 PDF Download

ISC058N04NM5ATMA1 PDF Preview

In Stock: 7,523

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