This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ISC230N10NM6ATMA1 +BOM

ISC230N10NM6ATMA1 is a power semiconductor device designed for applications requiring voltages above 100V

Manufacturer:

Infineon
Mfr.Part #:

ISC230N10NM6ATMA1
Datasheet:

ISC230N10NM6ATMA1 Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for ISC230N10NM6ATMA1

ISC230N10NM6ATMA1 General Description

Housed in a convenient TO-220 package, the ISC230N10NM6ATMA1 is easy to mount and install, making it a hassle-free addition to any project. Compliant with RoHS standards and meeting industry benchmarks for quality, this transistor is a reliable and high-performing choice for those seeking excellence in their electronic components

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	31 A	Rds On - Drain-Source Resistance	23 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3.3 V
Qg - Gate Charge	7.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	48 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	9 ns	Forward Transconductance - Min	13 S
Product Type	MOSFET	Rise Time	1 ns
Factory Pack Quantity	5000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	6.5 ns
Typical Turn-On Delay Time	4.5 ns	Part # Aliases	ISC230N10NM6 SP005402670