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See Technical Specifications

JANSR2N7425 +BOM

QPLFeaturesPotential Applications

Manufacturer:

infineon
Mfr.Part #:

JANSR2N7425
Datasheet:

JANSR2N7425 Datasheet (PDF)
Configuration:

Discrete
ID Max:

-35.0 A
VF Max:

-3.3 V
Polarity:

P
EDA/CAD Models:

Request Free CAD Models for JANSR2N7425

JANSR2N7425 General Description

Elevate your electronics projects with the JANSR2N7425 Power Field-Effect Transistor. Engineered for high-performance applications, this 1-Element P-Channel device is crafted from silicon with a metal-oxide semiconductor design. With a current rating of 35A and a voltage capability of 100V, the JANSR2N7425 offers reliable power management solutions. Its low on-resistance of 0.075ohm ensures minimal power loss, making it an ideal choice for demanding circuit designs. Encased in a TO-254AA hermetic sealed package, this FET delivers exceptional performance and longevity in harsh environments

Key Features

Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight

Specifications

Configuration	Discrete	ID max	-35.0 A
VF max	-3.3 V	Polarity	P
Die Size	6	VBRDSS min	-100.0 V
QPL Part Number	2N7425	TID max	100.0 Krad(Si)
ESD Class	Class 3A	RDS (on) max	73.0 mΩ
Generation	R4	Optional TID Rating	100 300
Qualification	DLA	Language	SPICE
Product Category	Rad hard MOSFETs	Download Model	https://www.infineon.com/cms/dgdl/Infineon-Spice_File_IRHM9160-SimulationModels-v01_01-EN.spi?fileId=8ac78c8c84f2c0670184f4f0588b10d5