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JFE150DCKT +BOM
Ultra-low-noise, low-gate-current audio N-channel JFET
SC70-5-
Manufacturer:
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Mfr.Part #:
JFE150DCKT
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Datasheet:
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FET Type:
N-Channel
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Voltage - Breakdown (V(BR)GSS):
40 V
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Drain To Source Voltage (Vdss):
40 V
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Current - Drain (Idss) @ Vds (Vgs=0):
24 mA @ 10 V
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EDA/CAD Models:
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Availability: 3466 PCS
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JFE150DCKT General Description
The JFE150DCKT is a cutting-edge semiconductor device incorporating Burr-Brown™ discrete JFET technology from Texas Instruments. Designed using a state-of-the-art analog bipolar process, the JFE150 offers superior performance compared to traditional discrete JFET technologies. With user-adjustable quiescent current settings, this device delivers exceptional noise performance across a wide range of currents, from 50 µA to 20 mA
Key Features
- Small input capacitance: 12 pF @ 1 kHz
- High power density: 4.5 W/cm² at 25°C, 100 kHz
- Low leakage current: 0.005 μA @ 125°C, 0 V
Specifications
Category | Discrete Semiconductor ProductsTransistorsJFETs | Series | - |
FET Type | N-Channel | Voltage - Breakdown (V(BR)GSS) | 40 V |
Drain to Source Voltage (Vdss) | 40 V | Current - Drain (Idss) @ Vds (Vgs=0) | 24 mA @ 10 V |
Current Drain (Id) - Max | 50 mA | Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 0.1 µA |
Input Capacitance (Ciss) (Max) @ Vds | 24pF @ 5V | Operating Temperature | -40°C ~ 125°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | JFE150 |
Vn at 1 kHz (nV√Hz) | 0.8 | Breakdown voltage (V) | 40 |
VDS (V) | 40 | VGS (V) | -40 |
VGSTH typ (typ) (V) | -1.2 | Rating | Catalog |
Operating temperature range (°C) | -40 to 125 | feature-packaging | |
feature-rad-hard | feature-pin-count | 5 | |
feature-cecc-qualified | feature-esd-protection | ||
feature-escc-qualified | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-eccn-code | EAR99 | feature-svhc | |
feature-svhc-exceeds-threshold |
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In Stock: 3,466
Minimum Order: 1
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