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See Technical Specifications

MJ11015 +BOM

30 A, 120 V PNP Darlington Bipolar Power Transistor

Manufacturer:

Onsemi
Mfr.Part #:

MJ11015
Datasheet:

MJ11015 Datasheet (PDF)
Configuration:

Single
Transistor Polarity:

PNP
Collector- Emitter Voltage VCEO Max:

120 V
Emitter- Base Voltage VEBO:

5 V
EDA/CAD Models:

Request Free CAD Models for MJ11015

MJ11015 General Description

Engineered with precision and efficiency in mind, the MJ11015 excels in providing reliable performance in amplifying signals and ensuring optimal output capabilities. Its Darlington configuration allows for increased current gain and improved overall performance, making it an ideal choice for applications requiring high power amplification

Key Features

Fast Turn-On and Turn-Off Times
Low Input Current - I_in = 1mA (Max)
Safe Operating Area Indicator

Specifications

Product Category	Darlington Transistors	Configuration	Single
Transistor Polarity	PNP	Collector- Emitter Voltage VCEO Max	120 V
Emitter- Base Voltage VEBO	5 V	Collector- Base Voltage VCBO	120 V
Maximum DC Collector Current	30 A	Pd - Power Dissipation	200 W
Mounting Style	Through Hole	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	30 A
DC Collector/Base Gain hfe Min	200, 1000	Height	8.51 mm
Length	39.37 mm	Product Type	Darlington Transistors
Factory Pack Quantity	100	Subcategory	Transistors
Width	26.67 mm	Unit Weight	0.056438 oz