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See Technical Specifications

MJ11016G +BOM

30 A, 120 V NPN Darlington Bipolar Power Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

MJ11016G
Datasheet:

MJ11016G Datasheet (PDF)
Case Outline:

1-07
MSL Temp (°C):

0
Container Type:

FTRAY
EDA/CAD Models:

Request Free CAD Models for MJ11016G

MJ11016G General Description

The MJ11016G is a NPN Darlington Bipolar Power Transistor that has been engineered to meet the requirements of output devices in complementary general purpose amplifier applications. Along with its complementary counterparts, the MJ11015 (PNP), MJ11012, and MJ11016 (NPN), this transistor is designed to provide superior performance and reliability in a variety of amplifier applications

Key Features

High DC Current Gain - h_FE = 1000 (Min) @ I_C - 20 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistor
Junction Temperature to +200°C

Specifications

Status	Active	Case Outline	1-07
MSL Temp (°C)	0	Container Type	FTRAY

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

G**n 06/04/2023

From the multimeter does not ring and does not glow, i will check from 3 v-will write off

C**b 05/18/2022

Both items received, thank you!

D**n 05/18/2022

Excellent! Corresponds to the description, the quality is excellent, the capacity corresponds, but here is what kind of elastic holds, unfortunately, on the product page is not specified, i experienced 80 v-keeps stably in both directions, did not continue. Delivery a little more than a month.

W**t 08/21/2020

Product arrived defective.The seller made a five star.But wasted time.