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MJE253G +BOM

100V rated transistors with a maximum current capacity of 4A

MJE253G General Description

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.

mje253g mje253g

Key Features

  • High Reliability - MTBF > 1,000,000 hours
  • Low Electromagnetic Emissions - EMI and RFI
  • Economical Production Costs - Low Cost per Unit
  • Fast Burn-In Time - tBURN-IN = 100 hours (Typical)
  • Precise Current Monitoring - I = ±10 μAdc (Max)
  • SMT Package Available for High-Quality Advantage

Specifications

Status Active Compliance PbAHP
Case Outline 77-09 MSL Type NA
MSL Temp (°C) 0 Container Type BLKBX
Container Qty. 500 ON Target Y
Polarity PNP Type General Purpose
VCE(sat) Max (V) 0.6 IC Cont. (A) 4
VCEO Min (V) 100 VCBO (V) 100
VEBO (V) 7 VBE(sat) (V) 1.8
VBE(on) (V) 1.5 hFE Min 40
hFE Max 180 fT Min (MHz) 40
PTM Max (W) 15 Pricing ($/Unit) $0.2076

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Ratings and Reviews

More
a
a**n 11/28/2023

Very friendly company to deal with, I have not had any problems, I would recommend as a reliable supplier.

18
J
J**e 12/15/2022

good product...thanks

17
G
G**n 07/14/2021

A good indicator. The parcel arrived without tracking. Thresholds for inclusion of blue scale divisions: 10.28 v/10.89 v/11.44 v/12.07 v. From 1.8 v to the maximum red bezel-led lights. Current consumption 10-20 ia.

9
J
J**b 06/25/2021

Excellent! For good work on STM32 I have to change pull-up resistors R3 and R4 from 10k to 1k. Before darkness

10

Reviews

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MJE253G Datasheet PDF

Preliminary Specification MJE253G PDF Download

MJE253G PDF Preview