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MJ15003 +BOM

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications.

MJ15003 General Description

Bipolar (BJT) Transistor NPN 140 V 20 A 2MHz 250 W Through Hole TO-3

Key Features

  • High Safe Operating Area (100% Tested) - 5.0 A @ 50 V
  • For Low Distortion Complementary Designs
  • High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 140 V Collector- Base Voltage VCBO 140 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 20 A Pd - Power Dissipation 250 W
Gain Bandwidth Product fT 2 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Continuous Collector Current 20 A
DC Collector/Base Gain hfe Min 25 Height 8.51 mm
Length 39.37 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 100 Subcategory Transistors
Technology Si Width 26.67 mm
Unit Weight 0.056438 oz

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In Stock: 6,911

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.379 $1.38
10+ $1.172 $11.72
30+ $1.057 $31.71
100+ $0.927 $92.70

The prices below are for reference only.

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