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See Technical Specifications

MJF18008 +BOM

With a 450 V rating, MJF18008 is an NPN Bipolar Power Transistor capable of handling currents up to 8.0 A

Manufacturer:

Onsemi
Mfr.Part #:

MJF18008
Datasheet:

MJF18008 Datasheet (PDF)
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

450 V
Emitter- Base Voltage VEBO:

9 V
EDA/CAD Models:

Request Free CAD Models for MJF18008

MJF18008 General Description

Elevate your electronic projects to the next level with the MJE/MJF18008G, a game-changing solution for powering up your devices. Experience the difference that a state-of-the-art die can make in your 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. Choose reliability, choose efficiency, choose the MJE/MJF18008G

Key Features

Synchro-Pulse Mode: Precise Control Over Output Current
Low Thermal Resistance: Efficient Heat Dissipation
Wide Operating Temperature Range: Flexibility in Environmental Conditions
Overcurrent Protection Circuitry: Safe Operation under Fault Conditions
Simplified Driver Circuits: Easy System Design and Integration
Enhanced Current Sensing Accuracy: Precise Load Detection

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	450 V
Emitter- Base Voltage VEBO	9 V	Maximum DC Collector Current	8 A
Gain Bandwidth Product fT	13 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	DC Collector/Base Gain hfe Min	14
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si