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See Technical Specifications

MMBT3904LT1 +BOM

200 mA, 40 V NPN Bipolar Junction Transistor

Manufacturer:

ONSEMI
Mfr.Part #:

MMBT3904LT1
Datasheet:

MMBT3904LT1 Datasheet (PDF)
Part Life Cycle Code:

Transferred
ECCN Code:

EAR99
Collector Current-Max (IC):

0.2 A
Collector-Base Capacitance-Max:

4 pF
EDA/CAD Models:

Request Free CAD Models for MMBT3904LT1

MMBT3904LT1 General Description

This 200 mA, 40 V NPN Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.

Key Features

Industry-Leading Reliability and Performance
Advanced EMI Filtering for Improved Interference Suppression
Enhanced Temperature Range for Harsh Environments

Specifications

Part Life Cycle Code	Transferred	Reach Compliance Code
ECCN Code	EAR99	Collector Current-Max (IC)	0.2 A
Collector-Base Capacitance-Max	4 pF	Collector-Emitter Voltage-Max	40 V
Configuration	SINGLE	DC Current Gain-Min (hFE)	100
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e0	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Temperature-Max	150 °C	Polarity/Channel Type	NPN
Power Dissipation-Max (Abs)	0.225 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN LEAD
Terminal Form	GULL WING	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	200 MHz	Turn-off Time-Max (toff)	250 ns
Turn-on Time-Max (ton)	70 ns	VCEsat-Max	0.3 V