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NGTD13T65F2SWK +BOM

IGBT, 650V 30A FS2 bare die

NGTD13T65F2SWK General Description

With its advanced Field Stop II Trench construction, the NGTD13T65F2SWK Insulated Gate Bipolar Transistor (IGBT) offers exceptional performance in demanding switching applications. Its design allows for low on-state voltage and minimal switching loss, making it a cost-effective and reliable option for a wide range of power switching needs

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Key Features

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices
ON Semiconductor, LLC Original Stock

Application

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
ON Semiconductor, LLC Inventory

Specifications

Status Last Shipments Case Outline -
MSL Temp (°C) 0 Container Type PLRNG

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