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NGTD21T65F2WP +BOM

IGBT 650V 45A FS2 bare die

NGTD21T65F2WP General Description

The NGTD21T65F2WP Insulated Gate Bipolar Transistor (IGBT) is a top-of-the-line component designed for high-performance switching applications. With its Field Stop II Trench construction, this IGBT offers unparalleled durability and efficiency. Its low on-state voltage and minimal switching loss make it the perfect choice for demanding applications where precision and reliability are essential

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Key Features

  • High Speed Switching Capability
  • Operational Temperature up to 175°C
  • Suitable for High Frequency Applications
  • No Lead Containing Materials Used
ON Semiconductor, LLC Original Stock

Application

  • Solar Energy Converter
  • Backup Power Solutions
  • Robotic Welding Equipment
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Specifications

Status Last Shipments Case Outline -
MSL Temp (°C) 0 Container Type PLRNG

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In Stock: 5,351

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $5.031 $5.03
200+ $1.948 $389.60
500+ $1.880 $940.00
1000+ $1.845 $1,845.00

The prices below are for reference only.

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