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NGTD13T65F2WP +BOM

IGBT, 650V 30A FS2 bare die

NGTD13T65F2WP General Description

The NGTD13T65F2WP is a top-notch Insulated Gate Bipolar Transistor (IGBT) designed with a robust and cost-effective Field Stop II Trench construction. It is tailored to deliver superior performance in demanding switching applications, boasting both low on-state voltage and minimal switching loss. This makes it the ideal choice for applications that require high efficiency and reliability

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Key Features

  • Fast Response Time
  • Low Loss Operation
  • Suitable for Power Management
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Application

  • Emergency Preparedness
  • Smart Grid Technology
  • Portable Power
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Specifications

Status Last Shipments Case Outline -
MSL Temp (°C) 0 Container Type PLRNG

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In Stock: 7,410

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $2.956 $2.96
200+ $1.145 $229.00
500+ $1.105 $552.50
1000+ $1.085 $1,085.00

The prices below are for reference only.

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