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NSS1C201LT1G +BOM

Bipolar Transistor with Small Signal Capability, NPN Type, TO-236 Package, 2A Collector Current, 100V Breakdown Voltage

Manufacturer:

Onsemi
Mfr.Part #:

NSS1C201LT1G
Datasheet:

NSS1C201LT1G Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

318-08
MSL Type:

1
MSL Temp (°C):

260
EDA/CAD Models:

Request Free CAD Models for NSS1C201LT1G

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NSS1C201LT1G General Description

The NSS1C201LT1G is a low VCE(sat) Bipolar Transistor that offers high current gain capability and ultra-low saturation voltage. This miniature surface mount device is perfect for use in low voltage, high speed switching applications, where affordable and efficient energy control is crucial. Whether you're looking to improve the performance of your electronic devices or to enhance energy efficiency, this transistor is designed to meet your needs

Key Features

PbFree and Halogen Free
Automotive Qualified and PPAP Capable
AECQ101 Qualified for Critical Applications

Application

Power monitoring
Smart charging
Current regulation

Specifications

Status	Active	Compliance	PbAHP
Case Outline	318-08	MSL Type	1
MSL Temp (°C)	260	Container Type	REEL
Container Qty.	3000	ON Target	N
Polarity	NPN	Type	Low VCE(sat)
VCE(sat) Max (V)	0.09	IC Cont. (A)	2
VCEO Min (V)	100	VCBO (V)	140
VEBO (V)	7	VBE(sat) (V)	0.95
VBE(on) (V)	0.85	hFE Min	120
hFE Max	360	PTM Max (W)	0.71
Pricing ($/Unit)	$0.1149Sample