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See Technical Specifications

NTE103A +BOM

650mW NPN Bipolar Transistor with 69@300mA

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE103A
Datasheet:

NTE103A Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

1 A
Vce Saturation (Max) @ Ib, Ic:

170mV @ 50mA, 500mA
Current - Collector Cutoff (Max):

25µA (ICBO)

NTE103A General Description

Whether used in amplifier or switching circuits, the NTE103A silicon NPN transistor delivers the performance and reliability required for demanding applications. Its TO-39 metal can package ensures efficient heat dissipation, while the maximum collector-base voltage of 40 volts and maximum collector current of 500mA make it suitable for small to medium power applications. With a DC current gain ranging from 40 to 240, the transistor offers the flexibility to adapt to different circuit requirements, while the low base-emitter saturation voltage of 0.4 volts at 150mA ensures efficient switching performance

Specifications

Transistor Type	NPN	Current - Collector (Ic) (Max)	1 A
Vce Saturation (Max) @ Ib, Ic	170mV @ 50mA, 500mA	Current - Collector Cutoff (Max)	25µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	69 @ 300mA, 0V	Power - Max	650 mW
Operating Temperature	90°C (TJ)	Mounting Type	Through Hole