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NTBG160N120SC1 +BOM
Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
D2PAK-7-
Manufacturer:
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Mfr.Part #:
NTBG160N120SC1
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Datasheet:
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MSL Temp (°C):
245
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Container Type:
REEL
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Technology:
SiC
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Mounting Style:
SMD/SMT
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EDA/CAD Models:
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Availability: 4841 PCS
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NTBG160N120SC1 General Description
Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Key Features
- Drain-Source Voltage (VDS): 1200V
- Continuous Drain Current (ID): 160A
- RDS(on) (Static Drain-Source On-Resistance): 0.06 Ohms (typical) at VGS = 20V, ID = 80A
- Gate-Source Voltage (VGS): ±20V
- Gate Threshold Voltage (VGS(th)): 4.5V to 6.5V
- Total Gate Charge (Qg): 156nC (typical) at VDS = 900V, ID = 80A
- Power Dissipation (PD): 970W
- Operating Temperature Range: -55°C to 175°C
Application
The NTBG160N120SC1 is commonly used in applications such as power supplies, motor drives, electric vehicles, solar inverters, and industrial equipment where high-voltage and high-current capabilities are required.
Specifications
Status | Active | Case Outline | |
MSL Temp (°C) | 245 | Container Type | REEL |
Product Category | MOSFET | Technology | SiC |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 1.2 kV |
Id - Continuous Drain Current | 19.5 A | Rds On - Drain-Source Resistance | 224 mOhms |
Vgs - Gate-Source Voltage | - 15 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4.3 V |
Qg - Gate Charge | 33.8 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 136 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 7.4 ns | Product Type | MOSFET |
Rise Time | 11 ns | Factory Pack Quantity | 800 |
Subcategory | MOSFETs | Transistor Type | N-Channel |
Typical Turn-Off Delay Time | 15 ns | Typical Turn-On Delay Time | 11 ns |
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NTBG160N120SC1 Datasheet PDF
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In Stock: 4,841
Minimum Order: 1
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