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See Technical Specifications

NTE2373 +BOM

TRANSISTOR, MOSFET, PCHAN, 11A, 200V

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE2373
Datasheet:

NTE2373 Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

200 V
Current - Continuous Drain (Id) @ 25°C:

11A (Tc)
EDA/CAD Models:

Request Free CAD Models for NTE2373

NTE2373 General Description

Designed for high power applications, the NTE2373 P-Channel MOSFET is capable of handling voltages up to -200V and currents up to -11A. Its low On Resistance (Rds(on)) of 0.5ohm ensures minimal power loss during operation. The transistor is suitable for Through Hole mounting, providing a secure and durable connection in electronic circuits

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V	Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25 V
Power Dissipation (Max)	125W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole