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NTE2380 +BOM

This is the NTE2380, a Power Field-Effect Transistor designed for applications requiring a maximum current of 2

NTE2380 General Description

N-Channel 500 V 2.5A (Tc) 40W (Tc) Through Hole TO-220

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 25 V
Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C
Mounting Type Through Hole

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