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See Technical Specifications

NTE2381 +BOM

Unipolar P-MOSFET transistor designed for operation at voltages as low as -500V, with a continuous drain current of -2

P-Channel 500 V 2.7A (Tc) 85W (Tc) Through Hole TO-220

ECCN (US)	EAR99	Part Status	Active
HTS	8541.29.00.95	Automotive	No
PPAP	No	Category	Power MOSFET
Material	Si	Configuration	Single
Process Technology	TMOS	Channel Mode	Enhancement
Channel Type	P	Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	500	Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	5	Maximum Continuous Drain Current (A)	2.7
Maximum Gate Source Leakage Current (nA)	100	Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	4900@10V	Typical Gate Charge @ Vgs (nC)	18@10V
Typical Gate Charge @ 10V (nC)	18	Typical Gate to Drain Charge (nC)	9.2
Typical Gate to Source Charge (nC)	3.6	Typical Input Capacitance @ Vds (pF)	510@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	9.5@25V	Minimum Gate Threshold Voltage (V)	3
Typical Output Capacitance (pF)	70	Maximum Power Dissipation (mW)	85000
Typical Fall Time (ns)	100	Typical Rise Time (ns)	120
Typical Turn-Off Delay Time (ns)	80	Typical Turn-On Delay Time (ns)	35
Minimum Operating Temperature (°C)	-65	Maximum Operating Temperature (°C)	150
Typical Drain Source Resistance @ 25°C (mOhm)	3900@10V	Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	10.8	Typical Reverse Recovery Time (ns)	270
Maximum Diode Forward Voltage (V)	2.7	Mounting	Through Hole
PCB changed	3	Tab	Tab
Pin Count	3	Lead Shape	Through Hole