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See Technical Specifications

NTE2382 +BOM

NTE2382 description: Trans MOSFET N-CH 100V with 9.2A in TO-220 packaging

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE2382
Datasheet:

NTE2382 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

9.2A (Tc)
EDA/CAD Models:

Request Free CAD Models for NTE2382

NTE2382 General Description

Engineers and hobbyists alike will appreciate the NTE2382 for its combination of high current rating and low on-resistance, making it an ideal solution for demanding switching circuits. Its robust design and excellent performance characteristics make it a valuable addition to any electronic project requiring efficient power management

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Power Dissipation (Max)	50W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole