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NTE2383 +BOM
The NTE2383 is a silicon-based Power Field-Effect Transistor with a P-Channel configuration
TO-220-3-
Manufacturer:
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Mfr.Part #:
NTE2383
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Datasheet:
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain To Source Voltage (Vdss):
100 V
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Current - Continuous Drain (Id) @ 25°C:
10.5A (Tc)
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EDA/CAD Models:
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Availability: 6180 PCS
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NTE2383 General Description
P-Channel 100 V 10.5A (Tc) 75W (Tc) Through Hole TO-220
Specifications
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 300mOhm @ 5.3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 835 pF @ 25 V |
Power Dissipation (Max) | 75W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
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In Stock: 6,180
Minimum Order: 1
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