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NTE2390 +BOM

NTE2390 - 12A MOSFET with low ON resistance

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE2390
Datasheet:

NTE2390 Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

12A (Tc)
EDA/CAD Models:

Request Free CAD Models for NTE2390

NTE2390 General Description

Featuring a robust design and outstanding specifications, the NTE2390 transistor is a dependable solution for general-purpose amplifier and switching applications. Its high current gain, low saturation voltage, and maximum collector current make it well-equipped to meet the demands of modern electronic systems. The TO-220 package facilitates easy mounting and efficient heat dissipation, while its wide operating temperature range ensures reliability in various environments. Whether used in audio amplifier circuits, power supply circuits, motor control applications, or switching circuits, the NTE2390 transistor delivers consistent and reliable performance

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Power Dissipation (Max)	75W (Tc)	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole