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See Technical Specifications

NTE2639 +BOM

NTE2639 Power Bipolar Transistor: NPN, 12A I(C)

Manufacturer:

NTE Electronics, Inc
Mfr.Part #:

NTE2639
Datasheet:

NTE2639 Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

12 A
Voltage - Collector Emitter Breakdown (Max):

825 V
Vce Saturation (Max) @ Ib, Ic:

1V @ 1.75A, 7A
EDA/CAD Models:

Request Free CAD Models for NTE2639

NTE2639 General Description

For general-purpose amplifier and switching applications, the NTE2639 silicon NPN transistor from NTE Electronics is an excellent choice. With a maximum collector current rating of 1.5A and a power dissipation rating of 0.8W, this transistor offers reliable performance in various circuit designs. Its low noise figure of 0.6dB at 10mA collector current and high current gain (hFE) of 100 to 300 at 150mA collector current make it suitable for low noise amplifier circuits, ensuring stable and efficient amplification. The NTE2639's electrical characteristics, such as its collector-base voltage (VCBO) of 60V, collector-emitter voltage (VCEO) of 50V, and emitter-base voltage (VEBO) of 6V, cater to diverse application needs. Additionally, its transition frequency (ft) of 150MHz and total capacitance (Ccb) of 4pF make it well-suited for high-frequency applications. Housed in a TO-92 package, the NTE2639 provides a convenient and widely used package type for small-signal transistors, making it easy to incorporate into electronic designs

Specifications

Transistor Type	NPN	Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	825 V	Vce Saturation (Max) @ Ib, Ic	1V @ 1.75A, 7A
Current - Collector Cutoff (Max)	1mA	DC Current Gain (hFE) (Min) @ Ic, Vce	4 @ 7A, 1V
Power - Max	45 W	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole