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NTE2987 +BOM

The NTE2987 is characterized as a N-channel MOSFET rated for 100 volts and 20 amps, enclosed within a TO-220 package comprising three pins and a tab

NTE2987 General Description

N-Channel 100 V 20A 105W (Tc) Through Hole TO-220

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 20A
Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 120mOhm @ 10A, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30 nC @ 5 V
Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 25 V
FET Feature Logic Level Gate, 4V Drive Power Dissipation (Max) 105W (Tc)
Operating Temperature 175°C (TJ) Mounting Type Through Hole

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